![](\"http:\/\/www.esa.int\/var\/esa\/storage\/images\/esa_multimedia\/images\/2017\/12\/6x6_mm_gan_chip\/17286843-1-eng-GB\/6x6_mm_GaN_chip_small.jpg\")
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\nA prototype transmit\/receive module on a single 6×6 mm chip, intended to deliver miniaturised space radar systems for future missions.\n<\/p>\n
\nTraditional transmit\/receive modules used on Europe\u2019s Sentinel-1<\/a> and comparable radar missions employ separate circuits for the high-power amplifier, the low-noise amplifier and the switch\/isolator.\n<\/p>\n \nThe aim, developed for ESA by TNO<\/a> in the Netherlands, UMS<\/a> in France, and Airbus Defense and Space<\/a> in Germany, was to integrate all these functions onto a single chip<\/a>, while delivering increased efficiency and a threefold increase in radio-frequency power.\n<\/p>\n \nThe added ingredient enabling this was that the chip was made using gallium nitride (GaN) \u2013 the most promising semiconductor since silicon. If you have a Blu-ray player than you own a tiny crystal of GaN, used in high-performance blue lasers.\n<\/p>\n \nGaN can operate with high radio-frequency output power, low noise or at much higher temperatures than silicon. As a plus, it is also inherently resistant to radiation. ESA has been leading the industrialisation of GaN through the GaN Reliability Enhancement and Technology Transfer Initiative consortium<\/a>.\n<\/p>\n \nThis prototype<\/a> was developed through ESA\u2019s Basic Technology Research Programme<\/a>.\n<\/p>\n \nA follow-up project to integrate the chip into a complete radar module suitable for a future Sentinel-1 successor mission is being undertaken through the Agency\u2019s follow-up General Support Technology Programme<\/a>.<\/p>\n","protected":false},"excerpt":{"rendered":" \nA prototype transmit\/receive module on a single 6×6 mm chip, intended to deliver miniaturised space radar systems for future missions.\n<\/p>\n \nTraditional transmit\/receive modules used on Europe’s Sentinel-1<\/a> and comparable radar missions employ separate circuits for the high-power amplifier, the low-noise amplifier and the switch\/isolator.\n<\/p>\n \nThe aim, developed for ESA by TNO<\/a> in the Netherlands, UMS<\/a> in France, and Airbus Defense and Space<\/a> in Germany, was to integrate all these functions onto a single chip<\/a>, while delivering increased efficiency and a threefold increase in radio-frequency power.\n<\/p>\n \nThe added ingredient enabling this was that the chip was made using gallium nitride (GaN) – the most promising semiconductor since silicon. If you have a Blu-ray player than you own a tiny crystal of GaN, used in high-performance blue lasers.\n<\/p>\n \nGaN can operate with high radio-frequency output power, low noise or at much higher temperatures than silicon. As a plus, it is also inherently resistant to radiation. ESA has been leading the industrialisation of GaN through the GaN Reliability Enhancement and Technology Transfer Initiative consortium<\/a>.\n<\/p>\n \nThis prototype<\/a> was developed through ESA’s Basic Technology Research Programme<\/a>.\n<\/p>\n<\/p>\n