At the 2016 IEEE International Electron Devices Meeting, in a special poster session on MRAM, world-leading research and innovation hub for nano-electronics and digital technology imec presented a 8nm p-MTJ device with 100 percent tunnel magnetoresistance (TMR) and coercive field as high 1500Oe. This world’s smallest device enables the establishment of a manufacturing process for high-density spin-transfer-torque magnetic random access memory (STT-MRAM) arrays that meet the requirements of the 10nm and beyond logic node for embedded non-volatile memory applications. It also paves the way for high density stand-alone applications.