Researchers make a breakthrough toward the next generation of memory devices

A*STAR and NTU researchers have created a thin film material that allows them to control the size and density of magnetic skyrmions. In addition, they have also achieved electrical detection of these skyrmions. The fabrication process for these films is compatible with current industrial methods. This discovery is a breakthrough and is a key step towards the creation of a skyrmion-based memory device, which is one of the promising contenders for the next generation of memory technologies.