A KAIST team reported ultra-flexible organic flash memory that is bendable down to a radius of 300 μm. The memory exhibits a significantly-long projected retention rate with a programming voltage on par with the present industrial standards.
A KAIST team reported ultra-flexible organic flash memory that is bendable down to a radius of 300 μm. The memory exhibits a significantly-long projected retention rate with a programming voltage on par with the present industrial standards.