Physicists supervise the formation of higher manganese silicide films

A team from Kirensky Institute of Physics (Siberian Branch of the Russian Academy of Sciences) together with colleagues from Siberian Federal University have offered an approach for the controlled synthesis of semiconducting higher manganese silicide thin films. The films may be used in thermoelectric converters and other devices. The team also suggested other areas of application for these materials. The results of the work were published in Journal of Materials Science.