Nano-imaging of intersubband transitions in few-layer 2-D materials

Semiconducting heterostructures are key to the development of electronics and opto-electronics. Many applications in the infrared and terahertz frequency range exploit transitions, called intersubband transitions, between quantized states in semiconductor quantum wells. These intraband transitions exhibit very large oscillator strengths, close to unity. Their discovery in III-V semiconductor heterostructures depicted a huge impact within the condensed matter physics community and triggered the development of quantum well infrared photodetectors as well as quantum cascade lasers.