Two of the main drawbacks of using tin (Sn)-based metal halide perovskites (MHPs) in thin-film transistors have been simultaneously solved by an innovative hybrid 2D/3D structure. New findings will help unlock the potential of environmentally benign Sn-based MHPs in CMOS technology, paving the way for flexible and printable electronic devices.
Click here for original story, Making metal–halide perovskites useful in planar devices through a new hybrid structure
Source: ScienceDaily