Nanowires under tension create the basis for ultrafast transistors

Smaller chips, faster computers, less energy consumption. Novel concepts based on semiconductor nanowires are expected to make transistors in microelectronic circuits better and more efficient. Electron mobility plays a key role in this: The faster electrons can accelerate in these tiny wires, the faster a transistor can switch and the less energy it requires. A team of researchers from the Helmholtz-Zentrum Dresden-Rossendorf (HZDR), the TU Dresden and NaMLab has now succeeded in experimentally demonstrating that electron mobility in nanowires is remarkably enhanced when the shell places the wire core under tensile strain. This phenomenon offers novel opportunities for the development of ultrafast transistors.


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Source: Phys.org