The direct band gap of AlN-based materials makes them suitable for fabricating DUV optoelectronic devices, which have a wide range of application prospects in the fields of curing, water and air disinfection, medicine and biochemistry. Therefore, achieving a high-quality epitaxy of AlN films is of particular importance to ensure the excellent performance of DUV photoelectric devices.
Click here for original story, Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
Source: Phys.org