Silicon carbide (SiC) is a promising semiconductor material for power electronic devices, but it suffers from bipolar degradation, which severely limits its lifespan. To address this long-standing issue in a cost-effective manner, researchers have developed a proton implantation-based suppression method that can prevent the expansion of stacking faults, which lie at the root of bipolar degradation. This development could pave the way for reliable, economical, and power efficient SiC semiconductor devices.
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Source: ScienceDaily