A team of semiconductor researchers based in France has used a boron nitride separation layer to grow indium gallium nitride (InGaN) solar cells that were then lifted off their original sapphire substrate and placed onto a glass substrate.
A team of semiconductor researchers based in France has used a boron nitride separation layer to grow indium gallium nitride (InGaN) solar cells that were then lifted off their original sapphire substrate and placed onto a glass substrate.