A research group in Japan announced that it has quantified for the first time the impacts of three electron-scattering mechanisms for determining the resistance of silicon carbide (SiC) power semiconductor devices in power semiconductor modules. The university-industry team has found that resistance under the SiC interface can be reduced by two-thirds by suppressing electron scattering by the charges, a discovery that is expected to reduce energy consumption in electric power equipment by lowering the resistance of SiC power semiconductors.