Columbia Engineering researchers report that they have demonstrated a nearly ideal transistor made from a 2D material stack — with only a two-atom-thick semiconducting layer — by developing a completely clean and damage-free fabrication process. Their method shows vastly improved performance compared to 2D semiconductors fabricated with a conventional process, and could provide a scalable platform for creating ultra-clean devices in the future.
Click here for original story, Ultra-clean fabrication platform produces nearly ideal 2D transistors
Source: ScienceDaily