Researchers from Tokyo Metropolitan University have grown atomically thin crystalline layers of transition metal dichalcogenides (TMDCs) with varying composition over space, continuously feeding in different types of TMDC to a growth chamber to tailor changes in properties. Examples include 20-nanometer strips surrounded by TMDCs with atomically straight interfaces and layered structures. They also directly probed the electronic properties of these heterostructures; potential applications include electronics with unparalleled power efficiency.
Click here for original story, Atomic ‘patchwork’ using heteroepitaxy for next-generation semiconductor devices
Source: Phys.org