Scientists at Tokyo Institute of Technology (Tokyo Tech) report a new material combination that sets the stage for magnetic random access memory based on spin, an intrinsic property of electrons. The innovation could outperform current storage devices. Their breakthrough, published in a new study, describes a novel strategy to exploit spin-related phenomena in topological materials and could spur several advances in the field of spin electronics. Moreover, this study provides additional insight into the underlying mechanism of spin-related phenomena.
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Source: Phys.org