In a new report published on Scientific Reports, Milan M. Milošević and an international research team at the Zepler Institute for Photonics and Nanoelectronics, Etaphase Incorporated and the Departments of Chemistry, Physics and Astronomy, in the U.S. and the U.K. Introduced a hyperuniform-disordered platform to realize near-infrared (NIR) photonic devices to create, detect and manipulate light. They built the device on a silicon-on-insulator (SOI) platform to demonstrate the functionality of the structures in a flexible, silicon-integrated circuit unconstrained by crystalline symmetries. The scientists reported results for passive device elements, including waveguides and resonators seamlessly integrated with conventional silicon-on-insulator strip waveguides and vertical couplers. The hyperuniform-disordered platform improved compactness and enhanced energy efficiency as well as temperature stability, compared to silicon photonic devices fabricated on rib and strip waveguides.
Click here for original story, Hyperuniform disordered waveguides and devices for near infrared silicon photonics
Source: Phys.org