First bufferless 1.5 μm III-V lasers grown directly on silicon wafers in Si-photonics

Researchers from the Hong Kong University of Science and Technology (HKUST) have reported the world’s first 1.5 μm III-V lasers directly grown on the industry-standard 220 nm SOI (silicon-on-insulators) wafers without buffer, potentially paving an opening to the “holy grail” for present silicon (Si-) photonics research.


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Source: Phys.org