Strain-sensitive barium strontium titanate (Bax-Sr1-x-TiO3) perovskite systems are widely used for their superior nonlinear dielectric behaviors. In a new report on Science Advances, D.L. Ko and a research team in materials science and engineering, physics, electronics and information engineering in Taiwan, Hong Kong and the U.S. has developed new heterostructures including paraelectric Ba0.5Sr0.5TiO3 (BSTO) and ferroelectric BaTiO3 (BTO) epitaxially on a flexible muscovite substrate. The application of mechanical force through simple bending regulated the dielectric constant (electric energy potential) for BSTO ranging from -77 to 36%, as well as the channel current of BTO-based ferroelectric field effect transistors, by two orders. Ko et al. studied the detailed mechanism by exploring phase transition and band structure determination to implement phase-field simulations and provide theoretical support. The field opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.
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Source: Phys.org