One of the first things people do when they come across a new material with potentially interesting electronic properties is measure the Hall voltage. Never has this been more true than with the explosion of new 2-D materials, but it turns out that often, devices made out of 2-D materials intended to take Hall voltage measurements have inappropriate geometry. This is just what Adam Micolich and his team at the University of New South Wales found when they began studying the characteristics of the 2-D III-V semiconductor InAs, and realized there was a mismatch they needed to account for between the set-up they had and the set-up they were aiming for. “We figured this must be in the literature; we can’t be the first to want to correct this, but there was actually nothing out there,” he tells Phys.org.
Click here for original story, Hall error revelations raise aspirations for 2-D materials
Source: Phys.org