Magnetic random-access memory (MRAM) technology offers substantial potential towards next-generation universal memory architecture. However, state-of-the-art MRAMs are still fundamentally constrained by a sub-nanosecond speed limitation, which has remained a long-lasting scientific challenge in the spintronics R&D. In this double doctorate project, Luding Wang experimentally demonstrated a fully-functional picosecond opto-MRAM building block device, by integrating ultrafast photonics with spintronics.
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Source: Phys.org