Newly developed atomic engineering techniques have opened exciting opportunities for enabling ferroelectric behavior in high-k dielectrics, materials that have a high dielectric constant (i.e., kappa or k) compared to silicon. This could in turn inform the development of more advanced CMOS-based technology with a broader range of functions or properties.
Click here for original story, Nanoelectromechanical resonators based on hafnia–zirconia–alumina superlattices with gigahertz spectrum coverage
Source: Phys.org