Based on density functional theory analysis, a research team led by Prof. Zheng Xiaohong from the Hefei Institutes of Physical Science of the Chinese Academy of Sciences proposed that the double barrier structure can greatly enhance the tunneling electroresistance (TER) of ferroelectric tunnel junctions (FTJs), and demonstrated that the double barrier ferroelectric tunnel junction (DB-FTJ) can realize multi-state storage.
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Source: Phys.org