As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. Nearly ideal subthreshold swing (SS) and mobility higher than poly-silicon channel have been demonstrated.
Click here for original story, A device emerges from the fusion of IGZO and ferroelectric-HfO2
Source: Phys.org