The team led by UDE’s Prof. Michael Horn-von Hoegen aims at producing the thinnest possible layer of boron, so-called borophene, since it promises properties that could enable the construction of two-dimensional transistors. The molecular beam epitaxy used for this purpose until now results in domains that are far too small. For more precise investigations and for use in technology, however, larger areas are needed.
Click here for original story, Synthesis of large-area 2D material: Atomic layer pushes surface steps away
Source: Phys.org