Prof. Ding Junfeng and his team from the Hefei Institutes of Physical Science (HFIPS) of the Chinese Academy of Science, together with Prof. Zhang Genqiang from the University of Science and Technology of China, have achieved band gap optimization and photoelectric response enhancement of carbon nitride in the nitrogen vacancy graphite phase under high pressure.
Click here for original story, New strategy proposed for bandgap engineering and maintaining material properties under high pressure
Source: Phys.org