Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances such as contact resistance, on/off ratio, and mobility are often limited by the presence of interfacial residues caused by transfer procedures. We show an ideal residue-free transfer approach using polypropylene carbonate (PPC) with a negligible residue for monolayer MoS2. By incorporating bismuth semimetal contact with atomically clean monolayer MoS2-FET on h-BN substrate, we obtain an ultralow Ohmic contact resistance approaching the quantum limit and a record-high on/off ratio of ~1011 at 15 K. Such an ultraclean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting TMDs.
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Source: ScienceDaily