Researchers from the Low Energy Electronic Systems (LEES) Interdisciplinary Research Group (IRG) at Singapore-MIT Alliance for Research and Technology (SMART), MIT’s research enterprise in Singapore, together with Massachusetts Institute of Technology (MIT) and National University of Singapore (NUS) have found a method to quantify the distribution of compositional fluctuations in the indium gallium nitride (InGaN) quantum wells (QWs) at different indium concentrations.
Click here for original story, The science behind varying performance of different colored LEDs
Source: Phys.org